SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

Semiconductor devices may include a substrate, gate electrodes on the substrate, and source/drain regions at both sides of each of the gate electrodes. Each of the gate electrodes may include a gate insulating pattern on the substrate, a lower work-function electrode pattern that is on the gate insulating pattern and has a recessed upper surface, and an upper work-function electrode pattern that conformally extends on the recessed upper surface of the lower work-function electrode pattern. Topmost surfaces of the lower work-function electrode patterns may be disposed at an equal level, and the upper work-function electrode patterns may have different thicknesses from each other.

主权项

1. A semiconductor device comprising:
a substrate; a plurality of gate electrodes disposed on the substrate; and source/drain regions disposed at both sides of each of the plurality of gate electrodes, wherein each of the plurality of gate electrodes comprises a gate insulating pattern disposed on the substrate, a lower work-function electrode pattern disposed on the gate insulating pattern and comprising a recessed upper surface, and an upper work-function electrode pattern conformally extending on the recessed upper surface of the lower work-function electrode pattern, wherein topmost surfaces of the lower work-function electrode patterns are disposed at an equal level, and wherein the upper work-function electrode patterns have different thicknesses from each other.