| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR CHIPS STACKED OVER SUBSTRATE |
| 摘要 |
According to the present invention, a semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface, a first layer formed over the first surface, a second layer thicker than the first layer formed over the first portion of the first layer, the first and second layers being formed of a same material, a first semiconductor chip mounted over a second portion of the first layer; and a second semiconductor chip commonly mounted over the first semiconductor chip and the second layer. |
| 申请公布号 |
US2016064358(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514833608 |
申请日期 |
2015.08.24 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Usami Sensho;Hosokawa Koji |
| 分类号 |
H01L25/065;H01L23/31;H01L23/498;H01L25/00;H01L23/00 |
主分类号 |
H01L25/065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate including a first surface and a second surface opposite to the first surface; a first layer formed over the first surface; a second layer thicker than the first layer formed over the first portion of the first layer, the first and second layers being formed of a same material; a first semiconductor chip mounted over a second portion of the first layer; and a second semiconductor chip commonly mounted over the first semiconductor chip and the second layer. |
| 地址 |
Boise ID US |
