Command Set Extension for Non-Volatile Memory

摘要

A method and apparatus are provided for generating an adjusted internal electrical parameter for accessing a NAND Flash memory array based on an adjustment control parameter conveyed by a memory access instruction, where the memory access instruction is compliant with an Open NAND Flash Interface (ONFI) protocol to include a two command cycle sequence to specify a command for accessing the NAND Flash memory with the adjusted internal electrical parameter.

主权项

1. A method comprising:
receiving a memory access instruction for accessing a non-volatile memory array; generating an adjusted internal electrical parameter for accessing the non-volatile memory array based on an adjustment control parameter conveyed by the memory access instruction, and accessing the non-volatile memory array using the adjusted internal electrical parameter.