| 发明名称 |
DICING FILM AND DICING DIE-BONDING FILM |
| 摘要 |
The present invention relates to a dicing film including: a substrate film; and a cohesive layer, wherein a storage modulus of the cohesive layer at 30° C. is 3*105 to 4*106 Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%, a dicing die-bonding film including the dicing film, and a dicing method of a semiconductor wafer using the dicing die-bonding film. |
| 申请公布号 |
US2016060489(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414781537 |
申请日期 |
2014.12.29 |
| 申请人 |
LG CHEM, LTD. |
发明人 |
KIM Se Ra;JO Jung Ho;KIM Young Kook;KIM Hee Jung;LEE Kwang Joo;KIM Jung Hak;NAM Seung Hee |
| 分类号 |
C09J7/02;H01L23/00;H01L21/78;H01L21/683;C09J133/04;C09J163/00 |
主分类号 |
C09J7/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A dicing film comprising: a substrate film; and a cohesive layer, wherein
a storage modulus of the cohesive layer at 30° C. is 3*105 to 4*106 Pa, and the cohesive layer has a degree of cross-linking of 80% to 99%. |
| 地址 |
Seoul KR |
