MEMS DEVICE AND METHOD FOR MANUFACTURING A MEMS DEVICE

摘要

A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched.

主权项

1. A method for producing a MEMS device comprising:
forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers, wherein a semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers; and after forming the semiconductor layer stack, concurrently etching at least a portion of each of the first and third monocrystalline semiconductor layers.