SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF

摘要

A method for forming a semiconductor structure is provided. The method includes providing a substrate having a device region; and forming a sacrificial layer on a surface of the substrate in the device region. The method also includes forming a device layer having a plurality of openings exposing a portion of the surface of the sacrificial layer on the sacrificial layer; and removing the sacrificial layer to expose the surface of the substrate in the device region. Further, the method includes forming a cavity in the substrate in the device region by simultaneously etching the surface of the substrate in the device region exposed by the removed sacrificial layer and the plurality of openings using an anisotropic etching process.

主权项

1. A method for fabricating a semiconductor structure, comprising:
providing a substrate having a device region; forming a sacrificial layer on a surface of the substrate in the device region; forming a device layer having a plurality of openings exposing a portion the sacrificial layer on the sacrificial layer; removing the sacrificial layer to expose the surface of the substrate in the device region; and forming a cavity in the substrate in the device region by simultaneously etching the surface of the substrate in the device region exposed by the removed sacrificial layer and the plurality of openings using an anisotropic etching process.