发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND PREPARATION METHOD THEREFOR, AND DISPLAY APPARATUS
摘要 Provided are a thin-film transistor array substrate and a preparation method therefor, and a display apparatus. The preparation method for the thin-film transistor array substrate comprises: forming a pattern including a common electrode (102), a common electrode wire (103), a gate line (104) and a data line (105) on a substrate (101) by means of one-time patterning process; forming an insulation layer (106); forming a pattern of an active layer (107) by means of one-time patterning process; forming a gate insulation layer (108), and forming via holes (109, 110, 111), corresponding to the gate line, the data line and the active layer on the gate insulation layer by means of one-time patterning process; and forming a pattern including pixel electrodes (112), a gate electrode (113) and source and drain electrodes (114, 115) by means of one-time patterning process. An array substrate having a top gate type thin-film transistor can be prepared only by four-time patterning process, thereby simplifying the process and saving the cost.
申请公布号 WO2016029543(A1) 申请公布日期 2016.03.03
申请号 WO2014CN89974 申请日期 2014.10.31
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 NING, CE
分类号 H01L21/77;G02F1/1362;G02F1/1368;H01L27/12 主分类号 H01L21/77
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