| 摘要 |
The present invention relates to a preparation method of a monocrystalline silicon ingot, which comprises the steps of: storing temperature change of a growth furnace during a precedent section which grows the body of the monocrystalline silicon ingot at the growth furnace as past data; obtaining a temperature prediction correlation which predicts the temperature inside the growth furnace for growing body of the monocrystalline silicon ingot during a subsequent section following the precedent section, using the past data; and adjusting growth conditions of the body of the monocrystalline silicon ingot to be grown during the subsequent section using the temperature prediction correlation. According to an embodiment of the present invention, the preparation method of a monocrystalline silicon ingot can precisely control at least one of diameter or elevation speed, thereby being capable of producing high quality monocrystalline silicon ingots. |
