| 摘要 |
A flash memory device according to the present invention includes: a cell array region including a word line structure; an X decoder region which is arranged on one side of the cell array region, and includes a pass transistor comprising a gate electrode, a source region and a drain region; and a metal line which is connected to the drain region of the pass transistor, and one side and the other side of the word line structure. The objective of the present invention is to provide the flash memory device which can assure the area which has been consumed by arranging an X decoder region previously, and can reduce RC load of the word line by arranging the X decoder region on only one side of the cell array region at the same time. |
