| 发明名称 |
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate stack positioned over the semiconductor substrate. The semiconductor device structure includes spacers positioned over sidewalls of the gate stack. The semiconductor device structure includes a first protective layer positioned between the gate stack and the spacers and between the spacers and the semiconductor substrate. The semiconductor device structure includes a second protective layer positioned between the spacers and the first protective layer. The first protective layer and the second protective layer include different materials. |
| 申请公布号 |
US2016064516(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414473585 |
申请日期 |
2014.08.29 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
LEE Ming-Chang;CHANG Chia-Der;LU Chih-Hung;SUN Chung-Tsun;HUNG Chung-Wei |
| 分类号 |
H01L29/66;H01L21/28;H01L29/423;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a semiconductor substrate; a gate stack positioned over the semiconductor substrate; spacers positioned over sidewalls of the gate stack; a first protective layer positioned between the gate stack and the spacers and between the spacers and the semiconductor substrate; and a second protective layer positioned between the spacers and the first protective layer, wherein the first protective layer and the second protective layer comprise different materials. |
| 地址 |
Hsin-Chu TW |
