IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

摘要

An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

主权项

1. An image sensor comprising:
a semiconductor layer having a first surface and a second surface opposite to the first surface; a plurality of light sensing regions formed in the semiconductor layer; a first pixel isolation layer disposed between adjacent light sensing regions from among the plurality of light sensing regions, the first pixel isolation layer being buried in a first isolation trench formed between the first surface and the second surface; a light shielding layer formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions; and a wiring layer formed on the first surface of the semiconductor layer.