| 发明名称 |
METHOD FOR FORMING INSULATOR FILM ON METAL FILM |
| 摘要 |
According to one embodiment, forming a metal film on an underlying layer, and depositing an oxide film on the metal film using plasma of a mixed gas induced above the metal film. The mixed gas includes a gaseous material source, a gaseous oxidant, and a gaseous reductant. |
| 申请公布号 |
US2016064405(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514610168 |
申请日期 |
2015.01.30 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKUDA SHINYA;WATANABE KEI;OGIHARA HIROTAKA;KITAMURA MASAYUKI;ISHIZAKI TAKESHI;IKENO DAISUKE;WAKATSUKI SATOSHI;SAKATA ATSUKO;WADA JUNICHI |
| 分类号 |
H01L27/115;H01L21/02;H01L21/285;H01L21/28 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A film formation method comprising:
forming a metal film on an underlying layer; and depositing an oxide film on the metal film using plasma of a mixed gas induced above the metal film, the mixed gas including a gaseous material source, a gaseous oxidant, and a gaseous reductant. |
| 地址 |
TOKYO JP |
