SEMICONDUCTOR DEVICE

摘要

According to this embodiment, a semiconductor device includes a semiconductor substrate, element formation regions that are formed in a line-and-space pattern in a surface layer portion of the semiconductor substrate to extend in a first direction, a coupling portion that is formed in the surface layer portion of the semiconductor substrate to couple the element formation regions adjacent to each other in a second direction intersecting the first direction, a source line that is disposed in an upper layer of the semiconductor substrate through an insulating film, a source line contact, having a circular shape or an elliptical shape, that is provided to electrically connect a source region pattern and the source lines by passing through the insulating film, when a region including the coupling portion and portions of the element formation regions coupled by the coupling portion is set to the source region pattern, and a bit line contact, having a circular shape or an elliptical shape, that is provided to electrically connect the element formation regions and a wiring layer located in an upper layer by passing through the insulating film.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; element formation regions extending in a line-and-space pattern in a first direction in a surface layer of the semiconductor substrate; a coupling portion selectively positioned in the surface layer of the semiconductor substrate to couple, in a second direction intersecting the first direction, element formation regions adjacent to each other; an insulating film disposed over the coupling portion located between the element formation regions; a source line over the insulating film at an upper layer of the semiconductor substrate; and a source line contact, having a circular or elliptical cross section, electrically connecting element formation regions at a location thereof coupled by the coupling portion with the source line.