发明名称 Word Line Hook Up with Protected Air Gap
摘要 A method of forming a semiconductor device includes forming a plurality of word lines separated by air gaps with contact pad structures connected to the word lines, and forming a dummy structure directly opposite an air gap between neighboring word lines. Subsequently, the contact pad structures are cut into individual contact pads by a contact pad cut that intersects the dummy structure.
申请公布号 US2016064345(A1) 申请公布日期 2016.03.03
申请号 US201514836730 申请日期 2015.08.26
申请人 SanDisk Technologies, Inc. 发明人 Shimoda Atsushi;Fukai Masayuki;Takahashi Yuji
分类号 H01L23/00;H01L21/768;H01L23/532 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device comprising: a plurality of word lines separated by air gaps; a plurality of contact pads, an individual contact pad connected to an individual word line; a contact pad cut that extends between neighboring contact pads, the contact pad cut separating the neighboring contact pads; and a dummy structure that is intersected by the contact pad cut, the dummy structure located directly opposite an air gap between neighboring word lines.
地址 Plano TX US