发明名称 |
Word Line Hook Up with Protected Air Gap |
摘要 |
A method of forming a semiconductor device includes forming a plurality of word lines separated by air gaps with contact pad structures connected to the word lines, and forming a dummy structure directly opposite an air gap between neighboring word lines. Subsequently, the contact pad structures are cut into individual contact pads by a contact pad cut that intersects the dummy structure. |
申请公布号 |
US2016064345(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201514836730 |
申请日期 |
2015.08.26 |
申请人 |
SanDisk Technologies, Inc. |
发明人 |
Shimoda Atsushi;Fukai Masayuki;Takahashi Yuji |
分类号 |
H01L23/00;H01L21/768;H01L23/532 |
主分类号 |
H01L23/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device comprising:
a plurality of word lines separated by air gaps; a plurality of contact pads, an individual contact pad connected to an individual word line; a contact pad cut that extends between neighboring contact pads, the contact pad cut separating the neighboring contact pads; and a dummy structure that is intersected by the contact pad cut, the dummy structure located directly opposite an air gap between neighboring word lines. |
地址 |
Plano TX US |