METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES INCLUDING AIR GAP SPACERS

摘要

A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal suicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming line patterns on a substrate; forming a sacrificial spacer and a first spacer that sequentially are on a sidewall of each of the line patterns; forming a poly-silicon layer in a space between line patterns; performing a first etching process on the poly-silicon layer to form a first-etched poly-silicon layer in the space between the line patterns and to expose a first portion of the first spacer, the first spacer further including a second portion not exposed under the first portion; performing a second etching process on the first-etched poly-silicon layer to form a poly-silicon pattern between the line patterns; and forming a metal silicide layer on a top surface of the poly-silicon pattern, wherein the metal silicide layer is formed to be spaced apart from an interface between the first portion and the second portion of the first spacer.