| 发明名称 |
METHOD OF FORMING A MAGNETIC DOMAIN WALL IN A NANOWIRE |
| 摘要 |
A method of forming a domain wall in a nanowire, the method comprising the steps of: a) providing a conductive strip orthogonally to a nanowire adjacent a free end of the nanowire, the nanowire having an original magnetization direction; b) pulsing a current through the conductive strip to generate an Oersted field having a direction opposite to the original magnetization direction such that magnetization direction of a portion of the nanowire transversed by the conductive strip becomes opposite to the original magnetization direction, the domain wall being generated in the nanowire at a location defined between the portion of the nanowire transversed by the conductive strip and a second end of the nanowire, wherein no external magnetic field is provided during formation of the domain wall. |
| 申请公布号 |
US2016064060(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514843918 |
申请日期 |
2015.09.02 |
| 申请人 |
Nanyang Technological University |
发明人 |
GUITE Chinkhanlun;KERK Inn Seng;MURAPAKA Chandra Sekhar;LEW Wen Siang |
| 分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of forming a domain wall in a nanowire, the method comprising the steps of:
a) providing a conductive strip orthogonally to a nanowire adjacent a free end of the nanowire, the nanowire having an original magnetization direction; b) pulsing a current through the conductive strip to generate an Oersted field having a direction opposite to the original magnetization direction such that magnetization direction of a portion of the nanowire transversed by the conductive strip becomes opposite to the original magnetization direction, the domain wall being generated in the nanowire at a location defined between the portion of the nanowire transversed by the conductive strip and a second end of the nanowire, wherein no external magnetic field is provided during formation of the domain wall. |
| 地址 |
Singapore SG |
