发明名称 |
SEMICONDUCTOR MEMORY APPARATUS |
摘要 |
A semiconductor memory apparatus may include a write driver, a data sensing section, and a programming control section. The write driver may write an input data into a memory cell in response to a write signal. The data sensing section may generate a comparison flag signal by comparing an output data outputted from the memory cell with a reference voltage in response to a verification read signal. The programming control section may generate the write signal for an initial write operation and the verification read signal in response to a write command, and generate the write signal for a following write operation as soon as the comparison flag signal is at a predetermined level. |
申请公布号 |
US2016064051(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201414562936 |
申请日期 |
2014.12.08 |
申请人 |
SK hynix Inc. |
发明人 |
AHN Chang Yong;EM Ho Seok |
分类号 |
G11C7/22;G11C7/12;G11C7/06 |
主分类号 |
G11C7/22 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor memory apparatus comprising:
a write driver configured to write an input data into a memory cell in response to a write signal; a data sensing section configured to generate a comparison flag signal by comparing an output data outputted from the memory cell with a reference voltage in response to a verification read signal; and a programming control section configured to generate the write signal for an initial write operation and the verification read signal in response to a write command, and generate the write signal for a following write operation as soon as the comparison flag signal is at a predetermined level. |
地址 |
Icheon-si Gyeonggi-do KR |