MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a first magnetic layer, forming a mask portion on the stack film, forming a sidewall insulating portion on a sidewall of the mask portion, etching the stack film using the mask portion and the sidewall insulating portion as a mask to form a stack structure including a first portion below the mask portion and a second portion below the sidewall insulating portion, forming an ambient insulating film enclosing the mask portion, the sidewall insulating portion and the stack structure, and etching the ambient insulating film, the sidewall insulating portion and the second portion of the stack structure using the mask portion as a mask to leave the first portion of the stack structure.

主权项

1. A method of manufacturing a magnetic memory device, comprising:
forming a stack film including a first magnetic layer on an underlying region including an underlying insulating film and a bottom electrode provided in the underlying insulating film; forming a mask portion on the stack film; forming a sidewall insulating portion on a sidewall of the mask portion; etching the stack film using the mask portion and the sidewall insulating portion as a mask to form a stack structure including a first portion located below the mask portion and a second portion located below the sidewall insulating portion; forming an ambient insulating film enclosing the mask portion, the sidewall insulating portion and the stack structure; and etching the ambient insulating film, the sidewall insulating portion and the second portion of the stack structure using the mask portion as a mask to leave the first portion of the stack structure.