发明名称 |
PIEZOELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME |
摘要 |
A piezoelectric thin film is formed through sputtering and consists essentially of scandium aluminum nitride. The carbon atomic content is 2.5 at % or less. When producing the piezoelectric thin film, scandium and aluminum are sputtered simultaneously on a substrate from a scandium aluminum alloy target material having a carbon atomic content of 5 at % or less in an atmosphere where at least nitrogen gas exists. The sputtering may be conducted also by applying an ion beam on an opposing surface of the alloy target material at an oblique angle. Moreover, aluminum and scandium may be also sputtered simultaneously on the substrate from an Sc target material and an Al target material. As a result, a piezoelectric thin film which exhibits excellent piezoelectric properties and a method for the same can be provided. |
申请公布号 |
US2016064645(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201414888278 |
申请日期 |
2014.05.22 |
申请人 |
DENSO CORPORATION ;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
TESHIGAHARA Akihiko;KANO Kazuhiko;AKIYAMA Morito;NISHIKUBO Keiko |
分类号 |
H01L41/18;C23C14/46;C23C14/18;C23C14/34 |
主分类号 |
H01L41/18 |
代理机构 |
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代理人 |
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主权项 |
1. A piezoelectric thin film that is formed through sputtering and consists essentially of scandium aluminum nitride, wherein
the piezoelectric thin film has a carbon atomic content of 2.5 at % or less. |
地址 |
Aichi JP |