METHODS OF FORMING ALTERNATIVE CHANNEL MATERIALS ON FINFET SEMICONDUCTOR DEVICES

摘要

One illustrative method disclosed herein includes forming a recessed fin structure and a replacement fin cavity in a layer of insulating material above the recessed fin structure, forming at least first and second individual layers of epi semiconductor material in the replacement fin cavity, wherein each of the first and second layers have different concentrations of germanium, performing an anneal process on the first and second layers so as to form a substantially homogeneous SiGe replacement fin in the fin cavity, and forming a gate structure around at least a portion of the replacement fin.

主权项

1. A method, comprising:
forming an initial fin structure in a semiconductor substrate; forming a layer of insulating material around said initial fin structure; performing a recess etching process to recess said initial fin structure and thereby define a recessed fin structure and a replacement fin cavity in said layer of insulating material above said recessed fin structure; forming at least first and second individual layers of epi semiconductor material in said replacement fin cavity, wherein each of said first and second layers have different concentrations of germanium; performing an anneal process on said first and second layers so as to form a substantially homogeneous SiGe replacement fin in said fin cavity; recessing said layer of insulating material so as to thereby expose at least an upper portion of said replacement fin; and forming a gate structure around at least a portion of said replacement fin exposed above said recessed layer of insulating material.