METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

A method of manufacturing a semiconductor device including the steps of providing a substrate having first type semiconductor regions and second type semiconductor regions, forming a conformal first epitaxy mask layer on the substrate, forming first type epitaxial layer in the substrate of the first type semiconductor regions, forming a conformal second epitaxy mask layer on the substrate, forming second type epitaxial layer in the substrate of the second type semiconductor regions, and removing the second epitaxy mask layer.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
providing a substrate including strained silicon device regions and non-strained silicon device regions, wherein said strained silicon device regions and non-strained silicon device regions are provided respectively with at least one gate structure; forming an epitaxy mask layer conformally on said gate structures and said substrate; and removing a part of said epitaxy mask layer on said strained silicon device regions and forming an epitaxial layer in said substrate at both sides of each said gate structure in said strained silicon device regions.