| 发明名称 |
INTEGRATED CIRCUIT WITH CAVITY-BASED ELECTRICAL INSULATION OF A PHOTODIODE |
| 摘要 |
An integrated circuit includes a semiconductor substrate, at least one photodiode, which is formed on a surface of the semiconductor substrate, at least one trench, which extends from the surface of the semiconductor substrate into the semiconductor substrate and surrounds a region of the semiconductor substrate on which the photodiode Is arranged, and at least one cavity in the semiconductor substrate, which is located below the surface of the semiconductor substrate. The at least one trench and the at least one cavity form an electrical insulation structure between the region of the semiconductor substrate on which the photodiode is arranged and one or more adjacent regions of the semiconductor substrate. |
| 申请公布号 |
US2016064431(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514840371 |
申请日期 |
2015.08.31 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Kautzsch Thoralf |
| 分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit, comprising:
a semiconductor substrate; at least one photodiode, which is formed on a surface of the semiconductor substrate; at least one trench, which extends from the surface of the semiconductor substrate into the semiconductor substrate and surrounds a region of the semiconductor substrate on which the photodiode Is arranged; and at least one cavity in the semiconductor substrate, which is located below the surface of the semiconductor substrate, wherein the at least one trench and the at least one cavity form an electrical insulation structure between the region of the semiconductor substrate on which the photodiode is arranged and one or more adjacent regions of the semiconductor substrate. |
| 地址 |
Neubiberg DE |
