MEMORY DEVICE INCLUDING SELECTIVELY DISPOSED LANDING PADS EXPANDED OVER SIGNAL LINE

摘要

Provided is a memory device. The memory device includes a substrate including a cell area and a peripheral area; gate line stacks and bit line stacks configured to vertically cross in the cell area; buried contacts disposed in areas, which are simultaneously shared by neighboring gate line stacks and neighboring bit line stacks; expanded landing pads including expanded portions connected to the buried contacts and expanded over adjacent bit line stacks, and disposed in a row; landing pads spaced apart from the expanded landing pads as a column, connected to the buried contacts, and having horizontal widths smaller than those of the expanded landing pads; and first storage nodes connected to the expanded portions of the expanded landing pads, and second storage nodes connected to the landing pads.

主权项

1. A memory device comprising:
a substrate spanning a cell area and a peripheral area of the device; gate line stacks and bit line stacks, the bit line stacks crossing the gate line stacks in the cell area; first and second groups of buried contacts, each of the buried contacts being disposed in a respective area bounded by neighboring ones of the gate line stacks and neighboring ones of the bit line stacks in a plan view of the device; rows of expanded first landing pads, the expanded first landing pads including expanded portions respectively electrically connected to the buried contacts of the first group and extending over respective ones of the bit line stacks that are adjacent to the buried contacts of the first group; second landing pads spaced disposed in columns with the expanded landing pads as spaced apart from the expanded first landing pads, respectively electrically connected to the buried contacts of the second group, and having widths smaller than those of the expanded landing pads in a given horizontal direction parallel to an upper surface of the substrate; and first storage nodes electrically connected to the expanded first landing pads at the expanded portions thereof, and second storage nodes electrically connected to the second landing pads.