SEMICONDUCTOR MEMORY DEVICE

摘要

According to one embodiment, a semiconductor memory device includes a generator to generate an error correction code. The generator includes a first encoder to calculate a first error correction code, a second encoder to calculate a second correction code, and an operation part to operate the first error correction code and the second error correction code.

主权项

1. A semiconductor memory device, comprising:
a nonvolatile memory system; and a generator to generate an error correction code; the generator including,
a first encoder to calculate a first error correction code with respect to a first data to be encoded,a second encoder to calculate, if the first data is unencodable, a second error correction code with respect to a third data generated from a second data corresponding to the first data, which is read from the nonvolatile memory system, andan operation part to operate the first error correction code and the second error correction code, and wherein the generator generates an operation result of a predetermined unit from the operation part as the error correction code.