发明名称 |
QUASI-VERTICAL DIODE WITH INTEGRATED OHMIC CONTACT BASE AND RELATED METHOD THEREOF |
摘要 |
A quasi-vertical Schottky diode architecture includes a topside anode contact that connects to external circuitry through an airbridge finger, a thin mesa of semiconductor material with epilayers including a bottomside highly-doped layer, a bottomside ohmic contact directly below the anode, and a host substrate onto which the diode material is bonded by a thin adhesive layer. A method of fabricating the diode architecture includes preparation of the semiconductor wafer for processing (including initial etching to expose the highly-doped epilayer, deposition of metals and annealing to form the ohmic contact, application of the adhesive layer to the host substrate, thermal compression bonding of diode wafer and host wafer, with ohmic contact side facing host wafer to form a composite wafer, etching and formation of diode mesas to isolate devices on the host substrate, lithography and formation of topside anode contact and external circuitry on host wafer). |
申请公布号 |
WO2016033557(A2) |
申请公布日期 |
2016.03.03 |
申请号 |
WO2015US47590 |
申请日期 |
2015.08.28 |
申请人 |
UNIVERSITY OF VIRGINIA;ALIJABBARI, NASER;WEIKLE II, ROBERT M.;BAUWENS, MATTHEW |
发明人 |
ALIJABBARI, NASER;WEIKLE II, ROBERT M.;BAUWENS, MATTHEW |
分类号 |
H01L27/095 |
主分类号 |
H01L27/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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