SEMICONDUCTOR STRUCTURE HAVING A SOURCE AND A DRAIN WITH REVERSE FACETS

摘要

A semiconductor structure including a semiconductor wafer. The semiconductor wafer includes a gate structure, a first trench in the semiconductor wafer adjacent to a first side of the gate structure and a second trench adjacent to a second side of the gate structure, the first and second trenches filled with a doped epitaxial silicon to form a source in the filled first trench and a drain in the filled second trench such that each of the source and drain are recessed and have an inverted facet. In a preferred exemplary embodiment, the epitaxial silicon is doped with boron.

主权项

1. A method of forming a semiconductor structure comprising:
obtaining a semiconductor wafer; forming a gate structure on the wafer; forming trenches for a source and a drain adjacent to the gate structure; and epitaxially growing a doped silicon to partially fill the trenches to form a recessed source and drain having an inverted facet, the recessed source and drain having angled walls extending from an outer periphery of the source and drain towards a center and a bottom of the source and drain.