LATERAL BIPOLAR JUNCTION TRANSISTORS ON A SILICON-ON-INSULATOR SUBSTRATE WITH A THIN DEVICE LAYER THICKNESS

摘要

Methods of forming bipolar device structures and bipolar device structures. An opening may be formed in a device layer of a silicon-on-insulator substrate that extends to a buried insulator layer of the silicon-on-insulator substrate. An intrinsic base layer may be grown within the device layer opening by lateral growth on opposite first and second sidewalls of the device layer bordering the opening. A first collector of a first bipolar junction transistor of the device structure may be formed at a first spacing from the first sidewall. A second collector of a second bipolar junction transistor of the device structure may be formed at a second spacing from the second sidewall. An emitter, which is shared by the first bipolar junction transistor and the second bipolar transistor, is formed inside the opening. Portions of the intrinsic base layer may supply respective intrinsic bases for the first and second bipolar junction transistors.

主权项

1. A method of forming a bipolar device structure, the method comprising:
forming an opening in a device layer of a silicon-on-insulator substrate that extends to a buried insulator layer of the silicon-on-insulator substrate; and epitaxially growing a single-crystal intrinsic base layer within the opening in the device layer by lateral epitaxial growth from a first sidewall and a second sidewall of the device layer that border the opening.