SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate, a first dielectric layer, a first conductive layer, and an isolation structure. The substrate has a trench. The first dielectric layer is disposed on the substrate between two neighboring trenches. The first conductive layer is disposed on the first dielectric layer. The isolation structure, including a step zone and a recessed zone, is disposed in the trench, wherein an upper surface of the step zone is higher than an upper surface of the first dielectric layer.

主权项

1. A semiconductor device, comprising:
a substrate comprising a plurality of trenches; a plurality of first dielectric layers respectively disposed on the substrate between two adjacent trenches; a plurality of first conductive layers disposed on the first dielectric layers; and a plurality of isolation structures disposed in the trenches, wherein each of the isolation structures comprises a step zone and a recessed zone, and an upper surface of the step zone is higher than an upper surface of the first dielectric layer.