SUPER-JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE THEREOF

摘要

The present disclosure relates to a super-junction structure, a method for manufacturing the super-junction structure and a semiconductor device including the super-junction structure. The super-junction structure includes an epitaxy layer of a first doping type and a plurality of first pillar regions of a second doping type which are formed in the epitaxy layer and are separated from each other. Each of the first pillar regions has a doping concentration that decreases from bottom to top. A portion of the epitaxy layer between adjacent ones of the first pillar regions is a second pillar region. The first pillar regions and the second pillar region are arranged alternatively to form the super-junction structure. The first pillar regions are characterized by the doping concentration that decreases from bottom to top so that the super-junction structure has a relatively high breakdown voltage and a relatively low on resistance. Moreover, the super-junction structure changes a path of an avalanche current and thus suppresses an avalanche current so that the device is not easily damaged.

主权项

1. A super-junction structure comprising:
an epitaxy layer of a first doping type; a plurality of first pillar regions of a second doping type, which are formed in said epitaxy layer and separated from each other, and a second pillar region, which is a portion of said epitaxy layer between adjacent ones of said plurality of first pillar regions and arranged alternatively with said plurality of first pillar regions to form said super-junction structure, wherein each of said plurality of first pillar regions comprises a first sub-pillar region and a second sub-pillar region, said second sub-pillar region is stacked on said first sub-pillar region and has a doping concentration smaller than that of said first sub-pillar.