发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR UNIT INCLUDING THE SAME |
摘要 |
A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer. |
申请公布号 |
US2016064440(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201514939280 |
申请日期 |
2015.11.12 |
申请人 |
Sony Corporation |
发明人 |
Yamaguchi Tetsuji;Nagahata Kazunori;Miura Toshihiro;Takimoto Kaori |
分类号 |
H01L27/146;H01L27/30 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer; a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section; a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer; an insulating section contacting the contact and provided in a region at least between a portion of the charge accumulation region and the separation section; and a depletion layer, wherein the insulating section is provided in a region between a portion of the charge accumulation region and the separation section where the depletion layer is formed. |
地址 |
Tokyo JP |