SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF

摘要

A method for forming a semiconductor structure is provided. The method includes providing a substrate having a first region and a second region; and forming at least one first trench in the first region of the substrate, and at least one second trench in second region of the substrate. The method also includes forming a first liner layer on side and bottom surfaces of the first trench, and the side and bottom surfaces of the second trench; and performing a rapid thermal oxy-nitridation process on the first liner layer to release a tensile stress between the first liner layer and the substrate. Further, the method includes removing a portion of the first liner layer in the first region to expose the first trench; and forming a second liner layer on the side and bottom surface of the first trench.

主权项

1. A method for fabricating a semiconductor structure, comprising:
providing a substrate having a first region and a second region; forming at least one first trench in the first region of the substrate, and at least one second trench in second region of the substrate; forming a first liner layer on side and bottom surfaces of the first trench, and the side and bottom surfaces of the second trench; performing a rapid thermal oxy-nitridation process on the first liner layer to release a tensile stress between the first liner layer and the substrate; removing a portion of the first liner layer in the first region to expose the first trench; and forming a second liner layer on the side and bottom surfaces of the first trench, the second liner layer being made of a material different than that of the first liner layer and tensile stress between the second liner layer and the substrate being more than that between the first liner layer and the substrate.