ION INJECTOR AND LENS SYSTEM FOR ION BEAM MILLING

摘要

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.

主权项

1. A method of making an electrode assembly for use in an ion beam etching reactor, the method comprising:
providing a first electrode, a second electrode and a third electrode; providing and securing a first inter-electrode structure such that it is immobilized between the first electrode and the second electrode, and providing and securing a second inter-electrode structure such that it is immobilized between the second electrode and the third electrode, wherein the first electrode, second electrode, third electrode, first inter-electrode structure, and second inter-electrode structure are substantially vertically aligned with one another to form the electrode assembly; and forming a plurality of apertures in the first electrode, second electrode and third electrode while the first inter-electrode structure and the second inter-electrode structure are immobilized in the electrode assembly.