PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING

摘要

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

主权项

1. A method of removing contaminants from a processed substrate having exposed silicon and silicon oxide surfaces, the method comprising:
etching the substrate in an etching process, wherein the etching process is selective to silicon over silicon oxide, wherein the etching process produces radical species, and wherein residual species from the radical species are incorporated within the silicon oxide layer during the etching and remain in the silicon oxide layer subsequent the etching process; and treating the substrate to remove at least a portion of the residual species from the silicon oxide layer.