| 发明名称 |
SEMICONDUCTOR MANUFACTURING SYSTEM AND SEMICONDUCTOR MANUFACTURING METHOD |
| 摘要 |
In one embodiment, a semiconductor manufacturing system includes a film forming apparatus configured to form a film on a surface of a wafer. The system further includes a gas supply module configured to supply at least a type of source gas for the film into the film forming apparatus. The system further includes a measurement module configured to measure a discharge amount of an exhaust gas from the film forming apparatus. The system further includes a controller configured to calculate a value corresponding to a surface area of the wafer based on the discharge amount of the exhaust gas from the film forming apparatus, and to control a supply amount of the source gas to the film forming apparatus based on the value corresponding to the surface area of the wafer. |
| 申请公布号 |
US2016060762(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514614574 |
申请日期 |
2015.02.05 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MATSUO Kazuhiro;Aiso Fumiki |
| 分类号 |
C23C16/52;H01L21/66;H01L21/02;C23C16/455 |
主分类号 |
C23C16/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor manufacturing system comprising:
a film forming apparatus configured to form a film on a surface of a wafer; a gas supply module configured to supply at least a type of source gas for the film into the film forming apparatus; a measurement module configured to measure a discharge amount of an exhaust gas from the film forming apparatus; and a controller configured to calculate a value corresponding to a surface area of the wafer based on the discharge amount of the exhaust gas from the film forming apparatus, and to control a supply amount of the source gas to the film forming apparatus based on the value corresponding to the surface area of the wafer. |
| 地址 |
Minato-ku JP |
