发明名称 |
SEMICONDUCTOR DEVICE HAVING PASSING GATE AND METHOD OF THE SAME |
摘要 |
The present invention relates to a semiconductor device to prevent the degradation of properties of a cell transistor using a passing gate effect. The semiconductor device includes: an element separation film limiting an active section; a main gate embedded in the active section and having a multi-layer structure; and a passing gate embedded in the element separation film and having a single layer structure. |
申请公布号 |
KR20160023184(A) |
申请公布日期 |
2016.03.03 |
申请号 |
KR20140109102 |
申请日期 |
2014.08.21 |
申请人 |
SK HYNIX INC. |
发明人 |
JANG, TAE SU;KYE, JEONG SEOB |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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