| 发明名称 |
ULTRAVIOLET LIGHT-EMITTING DEVICE |
| 摘要 |
Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm. |
| 申请公布号 |
US2016064598(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414784007 |
申请日期 |
2014.03.07 |
| 申请人 |
SEOUL VIOSYS CO., LTD. |
发明人 |
Choi Hyo Shik;Hwang Jung Hwan;Han Chang Suk |
| 分类号 |
H01L33/06;H01L33/14;H01L33/00;H01L33/32 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting device comprising:
an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN layer or an AlInGaN layer; and an active region having a multiple quantum well structure disposed between the n-type contact layer and the p-type contact layer, wherein the active region includes a well layer including GaN or InGaN, the well layers having a thickness less than 2 nm and radiates ultraviolet light having a peak wavelength in the range of 340 nm to 360 nm. |
| 地址 |
Ansan-si KR |
