MASK PATTERN STRUCTURES, METHODS OF FORMING HOLES USING THE SAME, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME

摘要

In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes.

主权项

1. A method of forming holes, the method comprising:
forming a plurality of guide patterns physically spaced apart from each other on an object layer, each of the guide patterns having a ring shape and including a first opening therein; forming a self-aligned layer on the object layer and the guide patterns to fill the first openings; forming preliminary holes by removing portions of the self-aligned layer which are self-assembled in the first openings and between the guide patterns neighboring each other; and partially etching the object layer through the preliminary holes.