| 摘要 |
[Problem] To use a plurality of semiconductor-switch-element-containing modules to construct a three-level power conversion device. Also, to provide a wiring structure that reduces the wiring inductance of a DC full-loop current path inside said device. [Solution] A first module accommodates upper and lower arms of a three-level power conversion circuit, and a second module accommodates a middle arm of said three-level power conversion circuit. Said modules are laid out next to each other. A connecting-terminal plate that acts as a high-potential connecting conductor and a connecting-terminal plate that acts as a low-potential connecting conductor, the bottom ends of which are connected to connecting terminals on the top surface of the first module, are provided, as is a connecting-terminal plate that acts as an intermediate-potential connecting conductor, the bottom end of which is connected to a connecting terminal on the top surface of the second module. Said connecting-terminal plates, which extend vertically from the respective connecting terminals, are laid out in close proximity to each other so as to be mutually parallel and overlapping. A DC capacitor is connected between external connection ends formed at the top ends of the respective connecting-terminal plates. |
