| 摘要 |
A film-thickness monitor and a film-thickness determination method are provided with which the thickness of a relatively hard film, e.g., a metal film, and the thickness of a relatively soft film, e.g., an organic film, can be determined with high accuracy. The film-thickness determination method is for determining the thickness of a vapor-deposited film on the basis of changes in the resonant frequency of a quartz crystal oscillator disposed in the film deposition device having a vapor deposition source, and comprises: conducting an electrical sweep around the resonant frequency of the quartz crystal oscillator to thereby acquire both half-value frequencies (F1, F2) (F1<F2) which give 1/2 the maximum value of conductance and a change with time ∆Fw of the half width at half maximum Fw (Fw=(F1-F2)/2) calculated from the half-value frequencies (F1, F2); calculating a resonant-frequency change ∆Fs of the quartz crystal oscillator (∆Fs=fq-fc) using equation (1) in the case where the change with time ∆Fw of the determined half width at half maximum is a given value or less; and calculating a resonant-frequency change ∆Fs of the quartz crystal oscillator using equation (2) in the case where the change with time ∆Fw of the determined half width at half maximum exceeds the given value. |
