SIC SEMICONDUCTOR ELEMENT IMPLEMENTED ON INSULATING OR SEMI-INSULATING SIC SUBSTRATE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a SiC semiconductor element having highly pressure-resistant characteristics and a method for manufacturing the same. The SiC semiconductor element according to the present invention comprises: an insulating or semi-insulating SiC substrate; a plurality of semiconductor areas formed inside the SiC substrate; and electrodes formed on the SiC substrate so as to electrically connect the plurality of semiconductor areas. The SiC element according to the present invention has high-density semiconductor areas formed in an insulating or semi-insulating SiC substrate, thereby exhibiting highly pressure-resistant characteristics, and can be implemented through an ion implantation process.