RESISTIVE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

Disclosed are a cross point array structure memory device, a memory system, and a method for operating the memory device. The memory device includes multiple tiles, and each of the tiles includes memory cells of multiple layers. A method for operating the memory device having a cross point array according to a technical field of the present invention comprises the following steps: accessing multiple memory cells of a first layer disposed in a region in which one or more first lines and second lines cross, in a first tile; accessing multiple memory cells of a second layer disposed in a region in which one or more first lines and second lines cross, in the first tile; and accessing memory cells of multiple layers of the first tiles, and accessing multiple memory cells disposed in a second tile.