SWITCH STAND-BY MODE ISOLATION IMPROVEMENT

摘要

Systems, apparatuses and methods are disclosed providing a semiconductor die comprising a semiconductor substrate and a radio-frequency (RF) switch including one or more series field-effect transistors (FETs) and one or more shunt FETs, each of the one or more series FETs and one or more shunt FETs having a respective gate node, the RF switch being configured to receive an RF signal from a power amplifier module and provide the RF signal to an antenna. The semiconductor die may further comprise an internal regulator voltage source configured to provide an internal regulator voltage when the RF switch is in a stand-by mode and shunt arm control circuitry configured to provide the internal regulator voltage to the gate nodes of the one or more shunt FETs when the RF switch is in the stand-by mode.

主权项

1. A semiconductor die comprising:
a semiconductor substrate; a radio-frequency (RF) switch including one or more series field-effect transistors (FETs) and one or more shunt FETs, each of the one or more series FETs and one or more shunt FETs having a respective gate node, the RF switch being configured to receive an RF signal from a power amplifier module and provide the RF signal to an antenna; an internal regulator voltage source configured to provide an internal regulator voltage when the RF switch is in a stand-by mode; and shunt arm control circuitry configured to provide the internal regulator voltage to the gate nodes of the one or more shunt FETs when the RF switch is in the stand-by mode.