| 发明名称 |
IMAGE SENSOR AND PIXEL OF THE IMAGE SENSOR |
| 摘要 |
A pixel of an image sensor includes a well below a gate and containing a dopant at a first concentration, a shallow trench isolation (STI) configured to electrically isolate the well, and a channel stop adjacent to at least one border between the well and the STI and containing a dopant at a second concentration higher than the first concentration. |
| 申请公布号 |
US2016064446(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514830926 |
申请日期 |
2015.08.20 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KYUNG HO;NAH SEUNG JOO;OH YOUNG SUN;JANG DONG YOUNG |
| 分类号 |
H01L27/146;H01L29/06 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A pixel comprising:
a well containing dopant at a first concentration; a gate of a transistor disposed on the well; shallow trench isolation (STI) electrically isolating the well, whereby the STI has sides defining first and second borders, respectively, of a region of the pixel comprising the well and though which a channel of the transistor is formed, the first and second borders being spaced in the widthwise direction of the channel; and a channel stop adjacent at least one of the first and second borders and containing dopant at a second concentration higher than the first concentration. |
| 地址 |
Suwon-si KR |
