发明名称 SOLID-STATE IMAGE SENSOR AND CAMERA
摘要 A solid-state image sensor is provided. The sensor includes a semiconductor region having a first conductivity type, and a charge accumulation portion having a second conductivity type. The semiconductor region includes a first semiconductor region, and a second semiconductor region formed below the first semiconductor region and having an impurity concentration higher than that of the first semiconductor region. The charge accumulation portion has a side and a bottom covered with the semiconductor region, and includes at least three regions arranged along a depth direction. A first region formed in a shallowest position has a width larger than that of each of the at least three regions. An impurity concentration of a second region formed in a deepest position is higher than that of each region between the first and second region of the at least three regions.
申请公布号 US2016064429(A1) 申请公布日期 2016.03.03
申请号 US201514818756 申请日期 2015.08.05
申请人 CANON KABUSHIKI KAISHA 发明人 Iida Satoko;Watanabe Takanori
分类号 H01L27/146;H04N5/355;H04N5/335 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid-state image sensor comprising: a substrate including a semiconductor region having a first conductivity type, and a charge accumulation portion having a second conductivity type opposite to the first conductivity type and configured to accumulate an electric charge generated by photoelectric conversion, wherein the semiconductor region includes a first semiconductor region, and a second semiconductor region formed below the first semiconductor region and having an impurity concentration higher than that of the first semiconductor region, the charge accumulation portion has a side and a bottom covered with the semiconductor region, and includes at least three regions arranged along a depth direction of the substrate, a first region formed in a shallowest position of the at least three regions has a width larger than that of each of the at least three regions except for the first region, in a direction parallel to a surface of the substrate, and an impurity concentration of a second region formed in a deepest position of the at least three regions is higher than that of each region between the first region and the second region of the at least three regions.
地址 Tokyo JP