发明名称 |
SOLID-STATE IMAGE SENSOR AND CAMERA |
摘要 |
A solid-state image sensor is provided. The sensor includes a semiconductor region having a first conductivity type, and a charge accumulation portion having a second conductivity type. The semiconductor region includes a first semiconductor region, and a second semiconductor region formed below the first semiconductor region and having an impurity concentration higher than that of the first semiconductor region. The charge accumulation portion has a side and a bottom covered with the semiconductor region, and includes at least three regions arranged along a depth direction. A first region formed in a shallowest position has a width larger than that of each of the at least three regions. An impurity concentration of a second region formed in a deepest position is higher than that of each region between the first and second region of the at least three regions. |
申请公布号 |
US2016064429(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201514818756 |
申请日期 |
2015.08.05 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Iida Satoko;Watanabe Takanori |
分类号 |
H01L27/146;H04N5/355;H04N5/335 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A solid-state image sensor comprising:
a substrate including a semiconductor region having a first conductivity type, and a charge accumulation portion having a second conductivity type opposite to the first conductivity type and configured to accumulate an electric charge generated by photoelectric conversion, wherein the semiconductor region includes a first semiconductor region, and a second semiconductor region formed below the first semiconductor region and having an impurity concentration higher than that of the first semiconductor region, the charge accumulation portion has a side and a bottom covered with the semiconductor region, and includes at least three regions arranged along a depth direction of the substrate, a first region formed in a shallowest position of the at least three regions has a width larger than that of each of the at least three regions except for the first region, in a direction parallel to a surface of the substrate, and an impurity concentration of a second region formed in a deepest position of the at least three regions is higher than that of each region between the first region and the second region of the at least three regions. |
地址 |
Tokyo JP |