NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

According to an embodiment, a nonvolatile semiconductor memory device comprises: a plurality of conductive layers stacked in a first direction via an inter-layer insulating layer; a semiconductor layer having the first direction as a longer direction; a tunnel insulating layer contacting a side surface of the semiconductor layer; a charge accumulation layer contacting a side surface of the tunnel insulating layer; and a block insulating layer contacting a side surface of the charge accumulation layer. The inter-layer insulating layer comprises: a first silicon oxide layer; a first metal oxide layer; and a first silicon nitride layer. The first metal oxide layer is formed on a first surface facing the conductive layer, of the first silicon oxide layer. The first silicon nitride layer is formed on the first surface via the first metal oxide layer.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a plurality of conductive layers stacked in a first direction via an inter-layer insulating layer; a semiconductor layer having the first direction as a longer direction; a tunnel insulating layer contacting a side surface of the semiconductor layer; a charge accumulation layer contacting aside surface of the tunnel insulating layer; and a block insulating layer contacting a side surface of the charge accumulation layer, the inter-layer insulating layer comprising: a first silicon oxide layer; a first metal oxide layer formed on a first surface facing the conductive layer, of the first silicon oxide layer; and a first silicon nitride layer formed on the first surface via the first metal oxide layer.