INTEGRATED CIRCUITS WITH FINFET NONVOLATILE MEMORY

摘要

Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming a first and second fin overlying a substrate, where the first and second fins intersect at a fin intersection. The first fin has a first fin left end. A tunnel dielectric and a floating gate are formed adjacent to the first fin with the tunnel dielectric between the floating gate and the first fin. An interpoly dielectric is formed adjacent to the floating gate, and a control gate is formed adjacent to the interpoly dielectric such that the interpoly dielectric is between the floating gate and the control gate. The control gate, interpoly dielectric, floating gate, and the tunnel dielectric are removed from over the first fin except for at a floating gate position between the first fin left end and the fin intersection.

主权项

1. A method of producing an integrated circuit comprising:
forming a first fin overlying a substrate, wherein the first fin extends in a first direction, and wherein the first fin comprises a first fin left end; forming a second fin overlying the substrate, wherein the second fin extends in a second direction different than the first direction, and wherein the second fin intersects the first fin at a fin intersection; forming a tunnel dielectric adjacent to the first fin; forming a floating gate adjacent to the first fin such that the tunnel dielectric is positioned between the floating gate and the first fin; forming an interpoly dielectric adjacent to the floating gate; forming a control gate adjacent to the interpoly dielectric such that the interpoly dielectric is positioned between the floating gate and the control gate; and removing the control gate, the interpoly dielectric, the floating gate, and the tunnel dielectric from over the first fin except for at a floating gate position, wherein the floating gate position is between the first fin left end and the fin intersection.