SEMICONDUCTOR MEMORY DEVICE

摘要

According to an embodiment, a semiconductor memory device comprises: a semiconductor layer; a first gate insulating film; a floating gate electrode; a second gate insulating film; and a control gate electrode. The semiconductor layer is provided on a substrate and extends in a certain direction. The first gate insulating film is formed on the semiconductor layer. The floating gate electrode is formed along the semiconductor layer on the first gate insulating film. The second gate insulating film is formed on an upper surface of the floating gate electrode. The control gate electrode faces the upper surface of the floating gate electrode via the second gate insulating film. The control gate electrode comprises: a first portion intersecting the certain direction at a first angle; and a second portion intersecting the certain direction at a second angle different from the first angle.

主权项

1. A semiconductor memory device, comprising:
a semiconductor layer provided on a substrate and extending in a certain direction; a first gate insulating film formed on the semiconductor layer; a floating gate electrode formed along the semiconductor layer on the first gate insulating film; a second gate insulating film formed on an upper surface of the floating gate electrode; and a control gate electrode facing the upper surface of the floating gate electrode via the second gate insulating film, the control gate electrode comprising: a first portion intersecting the certain direction at a first angle; and a second portion intersecting the certain direction at a second angle different from the first angle.