SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device is disclosed. The semiconductor device includes: a substrate; a first metal gate on the substrate; a first hard mask on the first metal gate; an interlayer dielectric (ILD) layer on top of and around the first metal gate; and a patterned metal layer embedded in the ILD layer, in which the top surface of the patterned metal layer is lower than the top surface of the first hard mask.

主权项

1. A method for fabricating semiconductor device, comprising:
providing a substrate, wherein the substrate comprises a first metal gate and a second metal gate thereon, a first hard mask on the first metal gate and a second hard mask on the second metal gate, and a first interlayer dielectric (ILD) layer around the first metal gate and the second metal gate; utilizing the first hard mask and the second hard mask as mask to remove part of the first ILD layer for forming a recess; and forming a patterned metal layer in the recess, wherein the top surface of the patterned metal layer is lower than the top surfaces of the first hard mask and the second hard mask.