| 发明名称 |
SEMICONDUCTOR MANUFACTURING FOR FORMING BOND PADS AND SEAL RINGS |
| 摘要 |
An integrated circuit die includes a first bond pad having a bond contact area at a first depth into a plurality of build-up layers over a semiconductor substrate of the integrated circuit die, having sidewalls that surround the bond contact area, the sidewalls extending from the first depth to a top surface of the plurality of build-up layers, and having a top portion that extends over a portion of a top surface of the plurality of build-up layers. |
| 申请公布号 |
US2016064294(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414470383 |
申请日期 |
2014.08.27 |
| 申请人 |
REBER DOUGLAS M.;Ajuria Sergio A.;Nguyen Phuc M. |
发明人 |
REBER DOUGLAS M.;Ajuria Sergio A.;Nguyen Phuc M. |
| 分类号 |
H01L21/66;H01L21/48;H01L23/00 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for making integrated circuits using a semiconductor substrate, the method comprising:
etching a first pad opening to a first depth into a plurality of build-up layers that are over the semiconductor substrate; depositing a conductive layer over the plurality of build-up layers, including over the first pad opening and along sidewalls of the first pad opening; and etching the metal layer to leave a remaining portion of the conductive layer over the first pad opening, along the sidewalls of the first pad opening, and extending over a portion of a top surface of the plurality of build-up layers to form a first bond pad within the first pad opening. |
| 地址 |
Austin TX US |
