Inverted Trapezoidal Recess for Epitaxial Growth

摘要

A semiconductor device having an epitaxial layer a method of manufacture thereof is provided. The semiconductor device has a substrate with a trench formed therein and a recess formed below the trench. The recess has sidewalls with a (111) crystal orientation. The depth of the trench is such that the depth is greater than or equal to one-half a length of sidewalls of the recess. An epitaxial layer is formed in the recess and the trench. The depth of the trench is sufficient to cause dislocations formed between the interface of the semiconductor substrate and the epitaxial layer to terminate along sidewalls of the trench.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; isolation trenches extending into the semiconductor substrate, wherein a recess in the semiconductor substrate extends between the isolation trenches, the recess having a bottom surface and sidewalls, the recess having sidewalls extending at an obtuse angle relative to the bottom surface of the recess, surfaces of the sidewalls having a (111) crystal orientation; and a compound semiconductor layer in the recess.